DDR4 - module - 8 GB - SO-DIMM 260-pin - 2400 MHz / PC4-19200 - CL17 - 1.2 V - unbuffered - non-ECC
| Main Specifications | |
|---|---|
| Product Description | Samsung - DDR4 - module - 8 GB - SO-DIMM 260-pin - 2400 MHz / PC4-19200 - unbuffered |
| Product Type | Memory module |
| Capacity | 8 GB |
| Memory Type | DDR4 SDRAM - SO-DIMM 260-pin |
| Upgrade Type | Generic |
| Data Integrity Check | Non-ECC |
| Speed | 2400 MHz (PC4-19200) |
| Latency Timings | CL17 (17-17-17) |
| Features | Dual rank, On-Die Termination (ODT), sixteen banks, unbuffered |
| Voltage | 1.2 V |
| General | |
| Capacity | 8 GB |
| Upgrade Type | Generic |
| Memory | |
| Type | DRAM memory module |
| Technology | DDR4 SDRAM |
| Form Factor | SO-DIMM 260-pin |
| Module Height (inch) | 1.18 |
| Speed | 2400 MHz (PC4-19200) |
| Latency Timings | CL17 (17-17-17) |
| Data Integrity Check | Non-ECC |
| Features | Dual rank, On-Die Termination (ODT), sixteen banks, unbuffered |
| Module Configuration | 1024 x 64 |
| Chips Organization | 512 x 8 |
| Voltage | 1.2 V |
| Miscellaneous | |
| Compliant Standards | RoHS, Lead-Free, Halogen-free |